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Silizium-Fotodiode Silicon Photodiode BPW 33
Wesentliche Merkmale * Speziell geeignet fur Anwendungen im Bereich von 350 nm bis 1100 nm * Sperrstromarm (typ. 20 pA) * DIL-Plastikbauform mit hoher Packungsdichte Anwendungen * Belichtungsmesser * Farbanalyse Typ Type BPW 33 Bestellnummer Ordering Code Q62702-P76
Features * Especially suitable for applications from 350 nm to 1100 nm * Low reverse current (typ. 20 pA) * DIL plastic package with high packing density Applications * Exposure meters * Color analysis
2001-02-21
1
BPW 33
Grenzwerte Maximum Ratings Bezeichnung Parameter Betriebs- und Lagertemperatur Operating and storage temperature range Sperrspannung Reverse voltage Verlustleistung, TA = 25 C Total power dissipation Symbol Symbol Wert Value - 40 ... + 85 7 150 Einheit Unit C V mW
Top; Tstg VR Ptot
Kennwerte (TA = 25 C, Normlicht A, T = 2856 K) Characteristics (TA = 25 C, standard light A, T = 2856 K) Bezeichnung Parameter Fotoempfindlichkeit, VR = 5 V Spectral sensitivity Wellenlange der max. Fotoempfindlichkeit Wavelength of max. sensitivity Spektraler Bereich der Fotoempfindlichkeit S = 10% von Smax Spectral range of sensitivity S = 10% of Smax Bestrahlungsempfindliche Flache Radiant sensitive area Abmessung der bestrahlungsempfindlichen Flache Dimensions of radiant sensitive area Abstand Chipoberflache zu Gehauseoberflache Distance chip front to case surface Halbwinkel Half angle Dunkelstrom, VR = 1 V Dark current Nullpunktsteilheit, E = 0 Zero crossover Spektrale Fotoempfindlichkeit, = 850 nm Spectral sensitivity Symbol Symbol Wert Value 75 ( 35) 800 350 ... 1100 Einheit Unit nA/Ix nm nm
S
S max
A LxB LxW H
7.34 2.71 x 2.71
mm2 mm x mm
0.5 60 20 ( 100) 2.5 0.59
mm Grad deg. pA pA/mV A/W
IR S0 S
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BPW 33
Kennwerte (TA = 25 C, Normlicht A, T = 2856 K) Characteristics (TA = 25 C, standard light A, T = 2856 K) (cont'd) Bezeichnung Parameter Quantenausbeute, = 850 nm Quantum yield Leerlaufspannung, Ev = 1000 Ix Open-circuit voltage Kurzschlustrom, Ev = 1000 Ix Short-circuit current Anstiegs- und Abfallzeit des Fotostromes Rise and fall time of the photocurrent RL = 1 k; VR = 5 V; = 850 nm; Ip = 70 A Durchlaspannung, IF = 100 mA, E = 0 Forward voltage Kapazitat, VR = 0 V, f = 1 MHz, E = 0 Capacitance Temperaturkoeffizient von VO Temperature coefficient of VO Temperaturkoeffizient von ISC Temperature coefficient of ISC Rauschaquivalente Strahlungsleistung Noise equivalent power VR = 1 V, = 850 nm Nachweisgrenze, VR = 1 V, = 850 nm Detection limit Symbol Symbol Wert Value 0.86 440 ( 375) 72 1.5 Einheit Unit Electrons Photon mV A s
VO ISC tr, tf
VF C0 TCV TCI NEP
1.3 630 - 2.6 0.2 4.3 x 10- 15
V pF mV/K %/K W ----------Hz cm x Hz ------------------------W
D*
6.3 x 1013
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BPW 33
Relative Spectral Sensitivity Srel = f ()
100 S rel % 80
OHF00062
Photocurrent IP = f (Ev), VR = 5 V Open-Circuit Voltage VO = f (Ev)
P
Total Power Dissipation Ptot = f (TA)
160 mW Ptot 140 120 100
OHF00958
A
10 3
OHF01064
10 4 mV VO 10 3
10 2 VO
60
10 1 10 2
80 60
40
10 0
P
10 1
40 20
20
0 400
600
800
1000 nm 1200
10 -1 0 10
10 1
10 2
10 3
10 lx 10 4 Ee
0
0
0
20
40
60
80 C 100 TA
Dark Current IR = f (VR), E = 0
80
OHF00073
Capacitance C = f (VR), f = 1 MHz, E = 0
1000 C pF 800
OHF01065
Dark Current
IR = f (TA), VR = 1 V, E = 0
R
10 4 pA
OHF00075
R
pA 60
10 3
700 600
40
500 400 300
10 2
20
200 100
10 1
0
0
1
2
3
4
5
6
7
8 VR
V 10
0 -2 10
10 -1
10 0
10 1 V 10 2 VR
10 0
0
20
40
60
80 C 100 TA
Directional Characteristics
Srel = f ()
40 30 20 10
0 1.0
OHF01402
50 0.8 60
0.6
70
0.4
80
0.2 0
90
100
1.0
0.8
0.6
0.4
0
20
40
60
80
100
120
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BPW 33
Mazeichnung Package Outlines
5.4 (0.213) Cathode marking 4.0 (0.157) 3.7 (0.146)
0.6 (0.024) 0.4 (0.016) 1.2 (0.047) 0.7 (0.028)
4.9 (0.193) 4.5 (0.177)
0.8 (0.031) 0.6 (0.024) 0.6 (0.024) 0.4 (0.016) 2.2 (0.087) 1.9 (0.075)
4.3 (0.169)
Chip position
0.6 (0.024)
1.8 (0.071) 1.4 (0.055)
0.6 (0.024) 0.4 (0.016) 0.4 (0.016) 0.35 (0.014) 0.5 (0.020) 0.2 (0.008) 0.3 (0.012) 0.8 (0.031) 0.6 (0.024)
0 ... 5
Photosensitive area 2.65 (0.104) x 2.65 (0.104)
5.08 (0.200) spacing
GEOY6643
Mae werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch).
Published by OSRAM Opto Semiconductors GmbH & Co. OHG Wernerwerkstrasse 2, D-93049 Regensburg (c) All Rights Reserved. Attention please! The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you - get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered.
2001-02-21
5
3.5 (0.138) 3.0 (0.118)

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